GeM Bid: 480 High-Voltage IGBTs for BARC Visakhapatnam - Bids by 3 Oct 2026
Bhabha Atomic Research Centre has invited a GeM bid for 480 units of 1200V discrete IGBTs co-packed with full-rated-current ultra-fast recovery diodes. The opportunity is relevant to power-semiconductor manufacturers and authorised suppliers.
TDR reference: 57441988
Authority: Bhabha Atomic Research Centre
Location: Visakhapatnam, Andhra Pradesh
Bid deadline: 3 October 2026, 5:00 PM
Estimated value: Refer tender documents
EMD: Refer tender documents; exemption available
Tender number: GEM/2026/B/8016852
What the tender covers
The buyer seeks high-voltage discrete semiconductor devices with a co-packed recovery diode. The published quantity is 480 units, with bid opening scheduled for 4 October 2026.
Bidder checklist
- Match the voltage, current, switching and diode-recovery specifications exactly.
- Confirm the acceptable make, package, test certificate and traceability requirements.
- Check delivery location, inspection terms, warranty and shelf-life clauses.
- Use the latest GeM documents and corrigenda when preparing the compliance sheet.
Source: TenderDetail listing for TDR 57441988. Cross-check the live bid, corrigenda and final submission time on GeM using tender number GEM/2026/B/8016852 before acting.
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